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KM62V256D - Low Power and Low Voltage CMOS Static RAM

Download the KM62V256D datasheet PDF. This datasheet also covers the KM62U256D variant, as both devices belong to the same low power and low voltage cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The KM62V256D and KM62U256D families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature range and have various package types for user flexibility of system design.

Key Features

  • Process Technology : TFT.
  • Organization : 32Kx8.
  • Power Supply Voltage KM62V256D family : 2.7~3.3V KM62U256D family : 3.0~3.6V.
  • Low Data Retention Voltage : 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type : 28-SOP-450 28-TSOP1-0813.4F/R CMOS SRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM62U256D_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com KM62V256D, KM62U256D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Improved power dissipation : 0.7W→1W Draft Data April 1, 1997 November 12, 1997 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and products.