KM641003B Datasheet - Samsung Semiconductor

KM641003B CMOS SRAM

The KM641003B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ′s advanc.

www.DataSheet4U.com PRELIMINARY KM641003B Document Title 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Preliminary PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary 2.2. Delete L-version. 2.3. Delete Data Retention Characteristics and Waveform. 2.4. Delete Industrial Tempe.

KM641003B Features

* Fast Access Time 8,10,12ns(Max.)

* Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM641003B - 8 : 150 mA(Max.) KM641003B - 10 : 145 mA(Max.) KM641003B - 12 : 140 mA(Max.)

* Single 5.0V ±10% Power Supply

* TTL Compatible Inputs and O

KM641003B_SamsungSemiconductor.pdf