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KM641003B - CMOS SRAM

Description

The KM641003B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits.

The KM641003B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 8,10,12ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 50 mA(Max. ) (CMOS) : 10 mA(Max. ) Operating KM641003B - 8 : 150 mA(Max. ) KM641003B - 10 : 145 mA(Max. ) KM641003B - 12 : 140 mA(Max. ).
  • Single 5.0V ±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pin Configuration.

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Other Datasheets by Samsung Semiconductor

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KM641003A CMOS SRAM
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Full PDF Text Transcription

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www.DataSheet4U.com PRELIMINARY KM641003B Document Title 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Preliminary PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary 2.2. Delete L-version. 2.3. Delete Data Retention Characteristics and Waveform. 2.4. Delete Industrial Temperature Range Part 2.5. Delete TSOP2 Package 2.6. Add Capacitive load of the test environment in A.C test load 2.7. Change D.C characteristics Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) Icc 150/140/130mA 150/145/140mA Isb 30mA 50mA Draft Data Apr. 1st, 1997 Jun.
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