K1S1616B1A memory equivalent, 1mx16 bit uni-transistor random access memory.
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Preliminary UtRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using o.
The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual .
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