Datasheet4U Logo Datasheet4U.com

K1S2816BCM Datasheet - Samsung semiconductor

K1S2816BCM 8Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature Compensated Self .
www.DataSheet4U.com K1S2816BCM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft - Design Target Draft Date April 12, 2004 Remark Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter as Min.5ns - Added comment on standby current(ISB1) measure condition as "Standby mode is supposed to be set up after at lea.

K1S2816BCM_Samsungsemiconductor.pdf

Preview of K1S2816BCM PDF
K1S2816BCM Datasheet Preview Page 2 K1S2816BCM Datasheet Preview Page 3

Datasheet Details

Part number:

K1S2816BCM

Manufacturer:

Samsung semiconductor

File Size:

163.89 KB

Description:

8mx16 bit page mode uni-transistor random access memory.

📁 Related Datasheet

K1S161611A 1Mx16 bit Uni-Transistor Random Access Memory (Samsung)

K1S161611A-I 1Mx16 bit Uni-Transistor Random Access Memory (Samsung)

K1S16161CA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory (Samsung)

K1S16161CA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory (Samsung)

K1S16161CA-I 1Mx16 bit Page Mode Uni-Transistor Random Access Memory (Samsung)

K1S16161CA-I 1Mx16 bit Page Mode Uni-Transistor Random Access Memory (Samsung)

K1S1616B1A 1Mx16 bit Uni-Transistor Random Access Memory (Samsung semiconductor)

K1S1616BCA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory (Samsung semiconductor)

TAGS

K1S2816BCM K1S2816BCM 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung semiconductor

K1S2816BCM Distributor