K1S2816BCM Datasheet (Samsung semiconductor) - 8Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S2816BCM, 8Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device supports 4 page read operation and Industrial temperature range.

The device supports dual chip selection for user interface.

The device also supports internal Temperature Compensated Self

www.DataSheet4U.com K1S2816BCM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No.

History 0.0 Initial Draft - Design Target Draft Date April 12, 2004 Remark Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter as Min.5ns - Added comment on standby current(ISB1) measure condition as "Standby mode is supposed to be set up after at lea