K1S3216BCD Datasheet (Samsung semiconductor) - 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S3216BCD, 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The device also supports deep power down mode for low stan

www.DataSheet4U.com K1S3216BCD Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No.

History 0.0 1.0 Initial Draft Finalize Draft Date Remark November 02, 2004 Preliminary Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right to change the specifications and products.

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