K1S321615M Datasheet (Samsung semiconductor) - 2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M, 2Mx16 bit Uni-Transistor Random Access Memory

The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell.

The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The device also supports deep power down mode for low standby current.

Process T

K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No.

History 0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA.

- Improve operating current from 30mA to 25mA.

- Change input and output reference voltage from 1.1V to 1.5V at AC test condition.

- Expand max operating voltage from 3.0V to 3.3V.

- Expand max operating temperature from 70°C to 85°C.

- Release speed from 70/85ns to 100ns.

- Re