K1S1616B1A Datasheet - Samsung semiconductor

K1S1616B1A 1Mx16 bit Uni-Transistor Random Access Memory

The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Techno.

K1S1616B1A Document Title 1Mx16 bit Uni-Transistor Random Access Memory Preliminary UtRAM www.DataSheet4U.com Revision History Revision No. History 0.0 Initial Draft Draft Date October 6, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch office.

K1S1616B1A_Samsungsemiconductor.pdf