K1S3216BCC Datasheet (SAMSUNG Electronics) - 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S3216BCC, 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S3216BCC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The device also supports deep power down mode for low stan

K1S3216BCC Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM www.DataSheet4U.com Revision History Revision No.

History 1.0 2.0 Revised - Corrected tOH from 5ns to 3ns.

Draft Date February 25, 2004 Remark Final September 20, 2004 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

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