K1S3216B1C Datasheet - Samsung semiconductor

K1S3216B1C 2Mx16 bit Uni-Transistor Random Access Memory

The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Techno.

Preliminary K1S3216B1C Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80uA to 100uA Draft Date January 16, 2003 June 9, 2003 Remark Advanced Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specification.

K1S3216B1C Datasheet (160.23 KB)

K1S3216B1C Datasheet Preview — Preview of K1S3216B1C PDF

Datasheet Details

Part number:

K1S3216B1C

Manufacturer:

Samsung semiconductor

File Size:

160.23 KB

Description:

2mx16 bit uni-transistor random access memory.

📁 Related Datasheet

K1S3216BCC 2Mx16 bit Page Mode Uni-Transistor Random Access Memory (SAMSUNG Electronics)

K1S3216BCD 2Mx16 bit Page Mode Uni-Transistor Random Access Memory (Samsung semiconductor)

K1S321611C 2Mx16 bit Uni-Transistor Random Access Memory (Samsung)

K1S321611C-FI70 2Mx16 bit Uni-Transistor Random Access Memory (Samsung)

K1S321611C-I 2Mx16 bit Uni-Transistor Random Access Memory (Samsung)

K1S321615M 2Mx16 bit Uni-Transistor Random Access Memory (Samsung semiconductor)

K1S32161CC 2Mx16 bit Page Mode Uni-Transistor Random Access Memory (Samsung semiconductor)

K1S161611A 1Mx16 bit Uni-Transistor Random Access Memory (Samsung)

TAGS

K1S3216B1C 2Mx16 bit Uni-Transistor Random Access Memory Samsung semiconductor

K1S3216B1C Distributor