K1S3216B1C Datasheet (Samsung semiconductor) - 2Mx16 bit Uni-Transistor Random Access Memory

K1S3216B1C, 2Mx16 bit Uni-Transistor Random Access Memory

The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The device also supports dual chip selection for user interface.

Process Techno

Preliminary K1S3216B1C Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No.

History 0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80uA to 100uA Draft Date January 16, 2003 June 9, 2003 Remark Advanced Preliminary The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right to change the specification