Uni-Transistor Datasheet | Specifications & PDF Download

UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier a

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PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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PC015BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 300mΩ @VGS = 10V 6A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=

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P4506BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25

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P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 2

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MITSUBISHI SEMICONDUCTOR M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and

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UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V *

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UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC UP1496

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P3710BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 2

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P2610BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26.8mΩ @VGS = 10V ID 36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS

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PA110BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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P8315AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 83mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 2

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P0260AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.6Ω @VGS = 10V ID 2A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25

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