P2610ADG Datasheet - UNIKC

P2610ADG N-Channel Transistor

P2610ADG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V ID 50A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 50 35.5 150 Avalanche Current IAS 53 Avalanche Energy L = 0.1mH EAS 140 Power Dissipation TC = 25 °C TC = 100 °C PD 128 51 .

P2610ADG Datasheet (422.44 KB)