P2610ATFG Datasheet - UNIKC

P2610ATFG N-Channel MOSFET

P2610ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26mΩ @VGS = 10V 31A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 31 19 IDM 130 Avalanche Current IAS 77 Avalanche Energy L = 0.3mH EAS 900 Power Dissipation TC = 25 °C P.

P2610ATFG Datasheet (352.95 KB)