P2615ATG Datasheet - UNIKC

P2615ATG N-Channel MOSFET

P2615ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 26mΩ @VGS = 10V ID 53A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC= 25 °C TC= 100 °C ID IDM IAS 53 34 160 37 Avalanche Energy L = 0.3 mH EAS 210 Power Dissipation TC= 25 °C TC= 100°C Operating Junction & Storage Temper.

P2615ATG Datasheet (471.62 KB)