P2610BS Datasheet - UNIKC

P2610BS N-Channel MOSFET

P2610BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26.8mΩ @VGS = 10V ID 36A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 36 23 70 Avalanche Current IAS 11 Avalanche Energy L = 0.1mH EAS 6 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Junct.

P2610BS Datasheet (391.34 KB)