P2615ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 26mΩ @VGS = 10V ID 28A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 28 16 84 Avalanche Current IAS 12 Avalanche Energy L = 10mH EAS 753 Power Dissipation TC = 25 °C TC = 100 °C PD 45 18 Ope.