P2610ATG Datasheet - UNIKC

P2610ATG N-Channel MOSFET

P2610ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V ID 50A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation TC = 25 °C TC = 100 °C L = 0.3mH TC = 25 °C TC = 100 °C VGS ID IDM IAS EAS PD ±20 50 31 200 77 900 128 51 Operating Junction & Storage.

P2610ATG Datasheet (152.37 KB)