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K4R271669E Datasheet, Samsung semiconductor

K4R271669E Datasheet, Samsung semiconductor

K4R271669E

datasheet Download (Size : 290.81KB)

K4R271669E Datasheet

K4R271669E rdram(e-die) equivalent, 128mbit rdram(e-die).

K4R271669E

datasheet Download (Size : 290.81KB)

K4R271669E Datasheet

Features and benefits

for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669E Figure 1: Direct RDRAM CSP Package The 128Mbit.

Application

including communications, graphics, video and any other application where high bandwidth and low latency are required. T.

Description

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SI.

Image gallery

K4R271669E Page 1 K4R271669E Page 2 K4R271669E Page 3

TAGS

K4R271669E
128Mbit
RDRAME-die
Samsung semiconductor

Manufacturer


Samsung semiconductor

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