• Part: K4R881869
  • Description: 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  • Manufacturer: Samsung Semiconductor
  • Size: 3.99 MB
K4R881869 Datasheet (PDF) Download
Samsung Semiconductor
K4R881869

Key Features

  • Low latency features - Write buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - Interleaved transactions
  • Organization: 2Kbyte pages and 32 banks, x 18 - x18 organization allows ECC configurations or increased storage and bandwidth