Datasheet Details
- Part number
- K4R881869
- Manufacturer
- Samsung semiconductor
- File Size
- 3.99 MB
- Datasheet
- K4R881869_Samsungsemiconductor.pdf
- Description
- 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869 Description
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2 *16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev..K4R881869 Features
* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage/bandwidth or for error correction. Preliminary Direct RDRAM™ SAMSUNG 001 K4R88 xx 69A-N xxx FiguK4R881869 Applications
* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 288Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz t
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