K4R271669B Datasheet (Samsung semiconductor) - 256K x 16/18 bit x 32s banks Direct RDRAMTM

K4R271669B, 256K x 16/18 bit x 32s banks Direct RDRAMTM

Signal SIO1,SIO0 I/O I/O Type CMOSa CMOSa # of Pins 2 Description Direct RDRAM™ Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Command input.

Pins used in conjunction with SIO0 and SIO1 for reading fro

K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct.

2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary Based on the Rambus 1.11ver.

128/144Mbit(32s banks) RDRAM Datasheet.

Direct RDRAM™ Page 0 Version 1.11 Oct.

2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a

K4R271669B Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 050 K4R xxxx 69B-N xxx SAMSUNG 05