Datasheet Details
Part number:
K4R271669B
Manufacturer:
Samsung semiconductor
File Size:
306.24 KB
Description:
256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669B_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4R271669B
Manufacturer:
Samsung semiconductor
File Size:
306.24 KB
Description:
256K x 16/18 bit x 32s banks Direct RDRAMTM
Features
* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 050 K4R xxxx 69B-N xxx SAMSUNG 05Applications
* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permitK4R271669B Distributors
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