K4R271669B - 256K x 16/18 bit x 32s banks Direct RDRAMTM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4R271669B
Manufacturer	Samsung semiconductor
File Size	306.24 KB
Description	256K x 16/18 bit x 32s banks Direct RDRAMTM
Datasheet	K4R271669B Datasheet
Additional preview pages of the K4R271669B datasheet.

Product details

Description

Signal SIO1,SIO0 I/O I/O Type CMOSa CMOSa # of Pins 2 Description Direct RDRAM™ Serial input/output.Pins for reading from and writing to the control registers using a serial access protocol.Also used for power management.Command input.Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control registers.Also used for power management.Serial clock input.Clock source used for reading from and writing to the control registers Supply voltage for the RDRAM core an

Features

for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.

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K4R441869A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869B - 256K x 16/18 bit x 32s banks Direct RDRAMTM
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Published: Apr 7, 2005 |