K4R271669B Datasheet - Samsung semiconductor

K4R271669B, 256K x 16/18 bit x 32s banks Direct RDRAMTM

K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.
Signal SIO1,SIO0 I/O I/O Type CMOSa CMOSa # of Pins 2 Description Direct RDRAM™ Serial input/output.

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Datasheet Details

Part number:

K4R271669B

Manufacturer:

Samsung semiconductor

File Size:

306.24 KB

Description:

256K x 16/18 bit x 32s banks Direct RDRAMTM

Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 050 K4R xxxx 69B-N xxx SAMSUNG 05

Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permit

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