K4R271669B

256K x 16/18 bit x 32s banks Direct RDRAMTM

Samsung semiconductor

K4R271669B Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 050 K4R xxxx 69B-N xxx SAMSUNG 05

K4R271669B General Description

Signal SIO1,SIO0 I/O I/O Type CMOSa CMOSa # of Pins 2 Description Direct RDRAM™ Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading fro.

K4R271669B Datasheet (306.24 KB)

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K4R271669B

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Samsung semiconductor

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306.24 KB

Description:

256k x 16/18 bit x 32s banks direct rdramtm.
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.

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K4R271669B 256K bit 32s banks Direct RDRAMTM Samsung semiconductor

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K4R271669B Features

K4R271669B General Description

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