K4R271669F Datasheet - Samsung semiconductor

K4R271669F 128Mbit RDRAM(F-die)

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control reg.

K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 K4R271669F Change History Version 1.4 ( September 2003 ) Direct RDRAM™ - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 128Mbit E-die RDRAM for short channel Datasheet Version 1.4 Version 1.41 ( January 2004 ) - Add the part number for leaded package. Page 0 Version 1.41 Ja.

K4R271669F Features

* for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669F Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization

K4R271669F_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4R271669F

Manufacturer:

Samsung semiconductor

File Size:

292.12 KB

Description:

128mbit rdram(f-die).

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K4R271669F K4R271669F 128Mbit RDRAMF-die Samsung semiconductor

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