Part number:
K4R271669F
Manufacturer:
Samsung semiconductor
File Size:
292.12 KB
Description:
128mbit rdram(f-die).
K4R271669F_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4R271669F
Manufacturer:
Samsung semiconductor
File Size:
292.12 KB
Description:
128mbit rdram(f-die).
K4R271669F, 128Mbit RDRAM(F-die)
Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.
Pins for reading from and writing to the control registers using a serial access protocol.
Also used for power management.
Command input.
Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control reg
K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan.
2004 K4R271669F Change History Version 1.4 ( September 2003 ) Direct RDRAM™ - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 128Mbit E-die RDRAM for short channel Datasheet Version 1.4 Version 1.41 ( January 2004 ) - Add the part number for leaded package.
Page 0 Version 1.41 Ja
K4R271669F Features
* for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669F Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization
📁 Related Datasheet
📌 All Tags