K4R271669A

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Samsung semiconductor

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K4R271669A

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Samsung semiconductor

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256k x 16/18 bit x 2*16 dependent banks direct rdramtm.
K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Dire.
Signal SIO1,SIO0 I/O I/O Type CMOSa # of Pins 2 Description Serial input/output. Pins for reading fr.

✔ K4R271669A Features

for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can

✔ K4R271669A Application

including computer memory, graphics, video, and any other application where high bandwidth and low latency a

📁 Related Datasheet

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K4R441869B - 256K x 16/18 bit x 32s banks Direct RDRAMTM (Samsung semiconductor)
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.

K4R571669D - 256/288Mbit RDRAM(D-die) (Samsung semiconductor)
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K4R271669A 256K bit 2 *16 Dependent Banks Direct RDRAMTM Samsung semiconductor

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✔ K4R271669A Application

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