K4R571669D Datasheet (Samsung semiconductor)

K4R571669D, 256/288Mbit RDRAM(D-die)

Signal SIO1,SIO0 CMD I/O I/O I Type CMOSa CMOSa # Pins center 2 1 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Command input.

Pins used in conjunction with SIO0 and SIO1 for reading from an

K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D/K4R881869D Change History Direct RDRAM™ Version 1.4( July 2002) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 256/288Mb A-die RDRAM Version 1.4 Page 0 Version 1.4 July 2002 K4R571669D/K4R881869D Overview The RDRAM device is a general purpose high-

K4R571669D Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 230 K4RXXXX69D-Fxxx Figure 1: Direc