K4R571669D Datasheet - Samsung semiconductor

K4R571669D, 256/288Mbit RDRAM(D-die)

K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..
Signal SIO1,SIO0 CMD I/O I/O I Type CMOSa CMOSa # Pins center 2 1 Description Serial input/output.

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Datasheet Details

Part number:

K4R571669D

Manufacturer:

Samsung semiconductor

File Size:

311.97 KB

Description:

256/288Mbit RDRAM(D-die)

Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 230 K4RXXXX69D-Fxxx Figure 1: Direc

Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit RDRAM devices are extremely highspeed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MH

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