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K4R571669D Datasheet - Samsung semiconductor

256/288Mbit RDRAM(D-die)

K4R571669D Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 230 K4RXXXX69D-Fxxx Figure 1: Direc

K4R571669D General Description

Signal SIO1,SIO0 CMD I/O I/O I Type CMOSa CMOSa # Pins center 2 1 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from an.

K4R571669D Datasheet (311.97 KB)

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Datasheet Details

Part number:

K4R571669D

Manufacturer:

Samsung semiconductor

File Size:

311.97 KB

Description:

256/288mbit rdram(d-die).
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..

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TAGS

K4R571669D 256 288Mbit RDRAMD-die Samsung semiconductor

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