K4R441869A, K4R Datasheet - Samsung semiconductor

K4R441869A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Signal SIO1,SIO0 I/O I/O Type CMOSa # of Pins 2 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the c.

K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2 16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Revision History Version 1.0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.0 ver. Direct RDRAM™ Version 1.01 (October 1999) On page 1 - Delete the part numbers of low power On page 32 - Add the data of CNFGA Register @ Figure 28 On page 33 - Add the data of CNFGB Register @ Figure 29 and.

K4R441869A Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 001 K4Rxxxx69A-Nxxx SAMSUNG 001 K4R

K4R-4418.pdf