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K4R271669E

128Mbit RDRAM(E-die)

K4R271669E Features

* for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669E Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization

K4R271669E General Description

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control reg.

K4R271669E Datasheet (290.81 KB)

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Datasheet Details

Part number:

K4R271669E

Manufacturer:

Samsung semiconductor

File Size:

290.81 KB

Description:

128mbit rdram(e-die).
K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R2.

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K4R271669E 128Mbit RDRAME-die Samsung semiconductor

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