K4R271669E Datasheet - Samsung semiconductor

K4R271669E 128Mbit RDRAM(E-die)

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control reg.

K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R271669E Change History Version 1.4 ( July 2002 ) Direct RDRAM™ - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 128Mbit D-die RDRAM for short channel Datasheet Version 1.4 Page 0 Version 1.4 July 2002 K4R271669E Overview The RDRAM device is a general purpose high-performance.

K4R271669E Features

* for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669E Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization

K4R271669E_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4R271669E

Manufacturer:

Samsung semiconductor

File Size:

290.81 KB

Description:

128mbit rdram(e-die).

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K4R271669E K4R271669E 128Mbit RDRAME-die Samsung semiconductor

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