K4R271669E Datasheet, Rdram(e-die), Samsung semiconductor

K4R271669E Features

  • Rdram(e-die) for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669E Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices

PDF File Details

Part number:

K4R271669E

Manufacturer:

Samsung semiconductor

File Size:

290.81kb

Download:

📄 Datasheet

Description:

128mbit rdram(e-die). Signal I/O Type CMOSa # Pins center 2 Description Serial input/output. Pins for reading from and writing to the control registers usi

Datasheet Preview: K4R271669E 📥 Download PDF (290.81kb)
Page 2 of K4R271669E Page 3 of K4R271669E

K4R271669E Application

  • Applications including communications, graphics, video and any other application where high bandwidth and low latency are required. The 128Mbit RDRA

TAGS

K4R271669E
128Mbit
RDRAME-die
Samsung semiconductor

📁 Related Datasheet

K4R271669A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 R.

K4R271669B - 256K x 16/18 bit x 32s banks Direct RDRAMTM (Samsung semiconductor)
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.

K4R271669F - 128Mbit RDRAM(F-die) (Samsung semiconductor)
K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 .

K4R441869A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 R.

K4R441869B - 256K x 16/18 bit x 32s banks Direct RDRAMTM (Samsung semiconductor)
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.

K4R571669D - 256/288Mbit RDRAM(D-die) (Samsung semiconductor)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..

K4R761869A - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM (Samsung semiconductor)
K4R761869A Direct RDRAM™ 576Mbit RDRAM(A-die) 1M x 18bit x 32s banks Direct RDRAMTM .. Version 1.41 January 2004 Page -1 Versi.

K4R881869 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9.

K4R881869D - 256/288Mbit RDRAM(D-die) (Samsung semiconductor)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..

K4R881869M - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts