K4R271669E Datasheet - Samsung semiconductor

K4R271669E, 128Mbit RDRAM(E-die)

K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R2.
Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.

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Datasheet Details

Part number:

K4R271669E

Manufacturer:

Samsung semiconductor

File Size:

290.81 KB

Description:

128Mbit RDRAM(E-die)

Features

* for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669E Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization

Applications

* including communications, graphics, video and any other application where high bandwidth and low latency are required. The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rate while usin

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