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K4R881869M-NCK8 Datasheet - Samsung semiconductor

K4R881869M-NCK8 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

Signal SIO1,SIO0 I/O I/O Type CMOSa # Pins 2 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the cont.
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2 16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9 Jan. 2000 K4R881869M Revision History Version 0.9 (January 2000) - Preliminary - First Copy - Based on the Rambus Datasheet 0.9ver. Preliminary Direct RDRAM™ Page 0 Rev. 0.9 Jan. 2000 K4R881869M Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including .

K4R881869M-NCK8 Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage/bandwidth or for error correction. Preliminary Direct RDRAM™ SAMSUNG 001 K4R88 xx 69A-N xxx Figu

K4R881869M-NCK8 Datasheet (3.99 MB)

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Datasheet Details

Part number:

K4R881869M-NCK8

Manufacturer:

Samsung semiconductor

File Size:

3.99 MB

Description:

288mbit rdram 512k x 18 bit x 2*16 dependent banks direct rdramtm.

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K4R881869M-NCK8 288Mbit RDRAM 512K bit 2 *16 Dependent Banks Direct RDRAMTM Samsung semiconductor

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