K4R881869M-NbCcG6 Datasheet, Rdramtm, Samsung semiconductor

K4R881869M-NbCcG6 Features

  • Rdramtm for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for add

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Part number:

K4R881869M-NbCcG6

Manufacturer:

Samsung semiconductor

File Size:

3.99MB

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📄 Datasheet

Description:

288mbit rdram 512k x 18 bit x 2*16 dependent banks direct rdramtm. Signal SIO1,SIO0 I/O I/O Type CMOSa # Pins 2 Description Serial input/output. Pins for reading from and writing to the control regist

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K4R881869M-NbCcG6 Application

  • Applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 288Mbit Di

TAGS

K4R881869M-NbCcG6
288Mbit
RDRAM
512K
bit
2
*16
Dependent
Banks
Direct
RDRAMTM
Samsung semiconductor

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