K4R881869M-NbCcG6

288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

Samsung semiconductor

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K4R881869M-NbCcG6

Manufacturer:

Samsung semiconductor

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3.99 MB

Description:

288mbit rdram 512k x 18 bit x 2*16 dependent banks direct rdramtm.
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDR.
Signal SIO1,SIO0 I/O I/O Type CMOSa # Pins 2 Description Serial input/output. Pins for reading from .

✔ K4R881869M-NbCcG6 Features

for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can

✔ K4R881869M-NbCcG6 Application

including computer memory, graphics, video, and any other application where high bandwidth and low latency a

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K4R881869M-NbCcG6 288Mbit RDRAM 512K bit 2 *16 Dependent Banks Direct RDRAMTM Samsung semiconductor

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✔ K4R881869M-NbCcG6 Features

✔ K4R881869M-NbCcG6 Application

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