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K4R881869M-NbCcG6, K4R - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869M-NbCcG6 Description

K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2 *16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev..
Signal SIO1,SIO0 I/O I/O Type CMOSa # Pins 2 Description Serial input/output.

K4R881869M-NbCcG6 Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage/bandwidth or for error correction. Preliminary Direct RDRAM™ SAMSUNG 001 K4R88 xx 69A-N xxx Figu

K4R881869M-NbCcG6 Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 288Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz t

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This datasheet PDF includes multiple part numbers: K4R881869M-NbCcG6, K4R. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4R881869M-NbCcG6, K4R
Manufacturer
Samsung semiconductor
File Size
3.99 MB
Datasheet
K4R-8818.pdf
Description
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Note
This datasheet PDF includes multiple part numbers: K4R881869M-NbCcG6, K4R.
Please refer to the document for exact specifications by model.

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288Mbit RDRAM 512K bit 2 *16 Dependent Banks Direct RDRAMTM Samsung semiconductor
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