K4S561633C-RBL Datasheet, Samsung semiconductor

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1.

ORDERING INFORMATION Part No. K4S561633C-R(B)L/N/P75 K4S561633C-R(B)L/N/P1H K4S561633C-R(B)L/N/P1L Max Freq. 133MHz(CL.

The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .