16Mx16 Datasheet | Pinout, Features, Price Comparison & PDF

16MX16TI DPSD16MX16TI

16Mx16, 7.5 - 15ns, P12, M-Densus 30A232-00 A M-D.

K4X56163PI-LE (Samsung semiconductor)

16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle •

Published: May 16, 2010 | 10 views

K4S561633C-P1L (Samsung semiconductor)

16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B

Published: Apr 7, 2005 | 8 views

K4S561633C-RBL (Samsung semiconductor)

16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B

Published: Apr 7, 2005 | 7 views

HY27SS16561A (Hynix Semiconductor)

(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Published: Jul 31, 2008 | 7 views

K4X56163PI-FE (Samsung semiconductor)

16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle •

Published: May 16, 2010 | 7 views

HY5S5B6GLF-6 (Hynix Semiconductor)

256Mbit (16Mx16bit) Mobile SDR Memory

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

Published: Mar 2, 2011 | 7 views

K4S561633C-P1H (Samsung semiconductor)

16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B

Published: Apr 7, 2005 | 6 views

K4S56163LC (Samsung semiconductor)

16Mx16 Mobile SDRAM 54CSP

K4S56163LC-R(B)F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 20

Published: Apr 7, 2005 | 6 views

K4S56163LC-RF (Samsung semiconductor)

16Mx16 Mobile SDRAM 54CSP

K4S56163LC-R(B)F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 20

Published: Apr 7, 2005 | 6 views

16MX16TI (ETC)

DPSD16MX16TI

16Mx16, 7.5 - 15ns, P12, M-Densus 30A232-00 A M-Densus 256 Megabit Synchronous DRAM High Density Memory Device DPSD16MX16TY5 ADVANCED INFORMATION

Published: Sep 11, 2005 | 6 views

HY27US08561M (Hynix Semiconductor)

(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

Published: Jul 31, 2008 | 6 views

HY27US16561M (Hynix Semiconductor)

(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

Published: Jul 31, 2008 | 6 views

HY27US08561A (Hynix Semiconductor)

(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Published: Jul 31, 2008 | 6 views

HY27SS08561A (Hynix Semiconductor)

(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Published: Jul 31, 2008 | 6 views

K4X56163PI-LG (Samsung semiconductor)

16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle •

Published: May 16, 2010 | 6 views

K4X56163PI-FG (Samsung semiconductor)

16Mx16 Mobile DDR SDRAM

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle •

Published: May 16, 2010 | 6 views

HY5S5B6GLF-6E (Hynix Semiconductor)

256Mbit (16Mx16bit) Mobile SDR Memory

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

Published: Mar 2, 2011 | 6 views

HY27SS08561M (Hynix Semiconductor)

(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

Published: Jul 31, 2008 | 5 views

HY27SS16561M (Hynix Semiconductor)

(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

Published: Jul 31, 2008 | 5 views

HY27US16561A (Hynix Semiconductor)

(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Published: Jul 31, 2008 | 5 views

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