HY27US08561M

(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Hynix Semiconductor

HY27US08561M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com - Pinout compatibility for all densities STATUS REGISTER ELECTRONI

HY27US08561M General Description

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA package dimension 0.6 - Change TSOP1,WSOP1,FBGA mechan.

HY27US08561M Datasheet (800.75 KB)

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HY27US08561M

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Hynix Semiconductor

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(hy27xsxx561m) 256mbit (32mx8bit / 16mx16bit) nand flash.
HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M.

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HY27US08561M HY27xSxx561M 256Mbit 32Mx8bit 16Mx16bit NAND Flash Hynix Semiconductor

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HY27US08561M Features

HY27US08561M General Description

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