HY27US08561M Datasheet, Flash, Hynix Semiconductor

HY27US08561M Features

• Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width.

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Part number:

HY27US08561M

Manufacturer:

Hynix Semiconductor

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800.75kb

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📄 Datasheet

Description:

(hy27xsxx561m) 256mbit (32mx8bit / 16mx16bit) nand flash. of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension :

HY27US08561M Application

• Applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com

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HY27US08561M

Hynix Semiconductor

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