HY27US08121A Datasheet - Hynix Semiconductor

HY27US08121A 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory

HY27US(08/16)121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 History Draft Date Remark Initial Draft. Sep. 2004 Preliminary 1) Correct part number ( change mode) - 2A -> 1A (sequential row read : disable -> enable) 2) Correct Table.5 & Table 12 - Correct Command Set - correct AC timing characteristics (tWP : 40 -> 25ns, tWH : 20 ->15ns) 3) Correct Summar.

HY27US08121A Features

* SUMMARY HIGH DENSITY NAND Flash MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX121A - 1.8V device: VCC = 1.7 to 1.95

HY27US08121A Datasheet (406.43 KB)

HY27US08121A Datasheet Preview — Preview of HY27US08121A PDF

Datasheet Details

Part number:

HY27US08121A

Manufacturer:

Hynix Semiconductor

File Size:

406.43 KB

Description:

512mbit (64m x 8bit / 32m x 16bit) nand flash memory.

📁 Related Datasheet

HY27US08121B 512Mb NAND FLASH (Hynix Semiconductor)

HY27US08121M (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash (Hynix Semiconductor)

HY27US08122B 512Mb NAND FLASH (Hynix Semiconductor)

HY27US081G1M 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash (Hynix Semiconductor)

HY27US08281A (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory (Hynix Semiconductor)

HY27US08561A (HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash (Hynix Semiconductor)

HY27US08561M (HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash (Hynix Semiconductor)

HY27US16121A 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory (Hynix Semiconductor)

TAGS

HY27US08121A 512Mbit 64M 8bit 32M 16bit NAND Flash Memory Hynix Semiconductor

HY27US08121A Distributor