Datasheet4U Logo Datasheet4U.com

HY27US081G1M Datasheet - Hynix Semiconductor

HY27US081G1M, 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general pr.
and is subject to change without notice.
 datasheet Preview Page 1 from Datasheet4u.com

HY27US081G1M-HynixSemiconductor.pdf

Preview of HY27US081G1M PDF

Datasheet Details

Part number:

HY27US081G1M

Manufacturer:

Hynix Semiconductor

File Size:

312.09 KB

Description:

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Applications

* NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27USxx1G1M

HY27US081G1M Distributors

📁 Related Datasheet

📌 All Tags

Hynix Semiconductor HY27US081G1M-like datasheet