Datasheet Details
- Part number
- HY27US081G1M
- Manufacturer
- Hynix Semiconductor
- File Size
- 312.09 KB
- Datasheet
- HY27US081G1M-HynixSemiconductor.pdf
- Description
- 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27US081G1M Description
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general pr.
and is subject to change without notice.
HY27US081G1M Applications
* NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27USxx1G1M
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