HY27US081G1M

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Hynix Semiconductor

HY27US081G1M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycl

HY27US081G1M Datasheet (312.09 KB)

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HY27US081G1M

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Hynix Semiconductor

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1gbit (128mx8bit / 64mx16bit) nand flash.
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general pr.

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HY27US081G1M 1Gbit 128Mx8bit 64Mx16bit NAND Flash Hynix Semiconductor

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HY27US081G1M Features

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