HY27US08121M Datasheet, flash equivalent, Hynix Semiconductor

HY27US08121M Features

• Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width.

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HY27US08121M

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Hynix Semiconductor

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📄 Datasheet

Description:

(hy27xsxx121m) 512mbit (64mx8bit / 32mx16bit) nand flash. of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of

HY27US08121M Application

• Applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com

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HY27US08121M

Hynix Semiconductor

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