HY27US08121M Datasheet - Hynix Semiconductor

HY27US08121M, (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface.

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Datasheet Details

Part number:

HY27US08121M

Manufacturer:

Hynix Semiconductor

File Size:

796.67 KB

Description:

(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

Applications

* FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www. DataSheet4U. com - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read OPTION : HY27USXX121M - 3.3V device: VCC = 2.7 t

HY27US08121M Distributors

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HY27US08121M HY27xSxx121M 512Mbit 64Mx8bit 32Mx16bit NAND Flash Hynix Semiconductor

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