HY27US08121M

(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

Hynix Semiconductor

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HY27US08121M

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Hynix Semiconductor

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(hy27xsxx121m) 512mbit (64mx8bit / 32mx16bit) nand flash.
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (P.

✔ HY27US08121M Features

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or

✔ HY27US08121M Application

FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address

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HY27US08121M HY27xSxx121M 512Mbit 64Mx8bit 32Mx16bit NAND Flash Hynix Semiconductor

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✔ HY27US08121M Features

✔ HY27US08121M Application

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