K4S561633C-RBL - 16Mx16 SDRAM 54CSP

Samsung semiconductor

K4S561633C-RBL Datasheet Preview — Preview of K4S561633C-RBL PDF

Datasheet Details

Part number	K4S561633C-RBL
Manufacturer	Samsung semiconductor
File Size	59.53 KB
Description	16Mx16 SDRAM 54CSP
Datasheet	K4S561633C-RBL_Samsungsemiconductor.pdf

K4S561633C-RBL Product details

Description

The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto refresh.
64ms refresh period (8K cycle).

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Published: Apr 7, 2005 |