K4S561633C-P1H 16Mx16 SDRAM 54CSP

Samsung semiconductor

Description

K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev.1.4 Dec.2002 K4S561633C-R(B.
The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Specifications

Part number: K4S561633C-P1H
Manufacturer: Samsung semiconductor
File Size: 59.53 KB
Datasheet: K4S561633C-P1H_Samsungsemiconductor.pdf
Description: 16Mx16 SDRAM 54CSP

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* All inputs

Applications

* ORDERING INFORMATION Part No. K4S561633C-R(B)L/N/P75 K4S561633C-R(B)L/N/P1H K4S561633C-R(B)L/N/P1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS Interface Package 54 CSP Pb (Pb Free) FUNCTIONAL BLOCK DIAGRAM -R(B)L ; Low Power, Operating Temp : -25°C ~ 70° C. -R(B)N

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K4S561633C-P1H 16Mx16 SDRAM 54CSP Samsung semiconductor

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