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K4S561633C-RL

16Mx16 SDRAM 54CSP

K4S561633C-RL Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* All inputs

K4S561633C-RL General Description

The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S561633C-RL Datasheet (59.53 KB)

Preview of K4S561633C-RL PDF

Datasheet Details

Part number:

K4S561633C-RL

Manufacturer:

Samsung semiconductor

File Size:

59.53 KB

Description:

16mx16 sdram 54csp.
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B.

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K4S561633C-RL 16Mx16 SDRAM 54CSP Samsung semiconductor

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