Datasheet4U Logo Datasheet4U.com

K4S561633C-N

16Mx16 SDRAM 54CSP

K4S561633C-N Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* All inputs

K4S561633C-N General Description

The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S561633C-N Datasheet (59.53 KB)

Preview of K4S561633C-N PDF

Datasheet Details

Part number:

K4S561633C-N

Manufacturer:

Samsung semiconductor

File Size:

59.53 KB

Description:

16mx16 sdram 54csp.
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B.

📁 Related Datasheet

K4S561633C-P1H - 16Mx16 SDRAM 54CSP (Samsung semiconductor)
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B.

K4S561633C-P1L - 16Mx16 SDRAM 54CSP (Samsung semiconductor)
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B.

K4S561633C-P75 - 16Mx16 SDRAM 54CSP (Samsung semiconductor)
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B.

K4S561633C-RBL - 16Mx16 SDRAM 54CSP (Samsung semiconductor)
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B.

K4S561633C-RL - 16Mx16 SDRAM 54CSP (Samsung semiconductor)
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B.

K4S561633F - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC (Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.

K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC (Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.

K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC (Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.

TAGS

K4S561633C-N 16Mx16 SDRAM 54CSP Samsung semiconductor

Image Gallery

K4S561633C-N Datasheet Preview Page 2 K4S561633C-N Datasheet Preview Page 3

K4S561633C-N Distributor