K4S561633C-N
Samsung semiconductor
59.53kb
16mx16 sdram 54csp. The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit
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K4S561633C-P1H - 16Mx16 SDRAM 54CSP
(Samsung semiconductor)
K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4 December 2002
Rev. 1.4 Dec. 2002
K4S561633C-R(B.
K4S561633C-P1L - 16Mx16 SDRAM 54CSP
(Samsung semiconductor)
K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4 December 2002
Rev. 1.4 Dec. 2002
K4S561633C-R(B.
K4S561633C-P75 - 16Mx16 SDRAM 54CSP
(Samsung semiconductor)
K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4 December 2002
Rev. 1.4 Dec. 2002
K4S561633C-R(B.
K4S561633C-RBL - 16Mx16 SDRAM 54CSP
(Samsung semiconductor)
K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4 December 2002
Rev. 1.4 Dec. 2002
K4S561633C-R(B.
K4S561633C-RL - 16Mx16 SDRAM 54CSP
(Samsung semiconductor)
K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4 December 2002
Rev. 1.4 Dec. 2002
K4S561633C-R(B.
K4S561633F - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.