K4S56163LC-RF Datasheet, 54csp, Samsung semiconductor

K4S56163LC-RF Features

• 54csp
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1 & 2 &

PDF File Details

Part number:

K4S56163LC-RF

Manufacturer:

Samsung semiconductor

File Size:

60.47kb

Download:

📄 Datasheet

Description:

16mx16 mobile sdram 54csp. The K4S56163LC is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit

K4S56163LC-RF Application

• Applications ORDERING INFORMATION Part No. Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)
• 1 66MHz(CL=2/3)
• 2 LVCMOS

TAGS

K4S56163LC-RF

Samsung semiconductor

📁 Related Datasheet

K4S56163LC - 16Mx16 Mobile SDRAM 54CSP (Samsung semiconductor)
K4S56163LC-R(B)F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 20.

K4S56163LF-XC - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XE - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XF - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XG - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XL - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XN - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZC - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZE - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZF - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .