K4S56163LF-XE 4M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC .
The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Specifications

Part number: K4S56163LF-XE
Manufacturer: Samsung semiconductor
File Size: 143.57 KB
Datasheet: K4S56163LF-XE_Samsungsemiconductor.pdf
Description: 4M x 16Bit x 4 Banks Mobile SDRAM

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 54 BOC Leaded (Lead Free) Interface Package - X(Z)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)

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K4S56163LF-XE 16Bit Banks Mobile SDRAM Samsung semiconductor

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