Download Datasheet (143.57 KB)
K4S56163LF-XC
Samsung semiconductor
143.57 KB
4m x 16bit x 4 banks mobile sdram.
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
* 2.5V power supply.
The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304.
📁 Related Datasheet
K4S56163LF-XE - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XF - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XG - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XL - 4M x 16Bit x 4 Banks Mobile SDRAM
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K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XN - 4M x 16Bit x 4 Banks Mobile SDRAM
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K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XZC - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
