K4S56163LF-XC Datasheet, Sdram, Samsung semiconductor

K4S56163LF-XC Features

• Sdram
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

PDF File Details

Part number:

K4S56163LF-XC

Manufacturer:

Samsung semiconductor

File Size:

143.57kb

Download:

📄 Datasheet

Description:

4m x 16bit x 4 banks mobile sdram. The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit

K4S56163LF-XC Application

• Applications ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz

TAGS

K4S56163LF-XC

Samsung semiconductor

📁 Related Datasheet

K4S56163LF-XE - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XF - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XG - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XL - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XN - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZC - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZE - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZF - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZG - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .

K4S56163LF-XZL - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. • .