K4S56163LF-XZC
Samsung semiconductor
143.57kb
4m x 16bit x 4 banks mobile sdram. The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit
TAGS
📁 Related Datasheet
K4S56163LF-XZE - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XZF - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XZG - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XZL - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XZN - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XC - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XE - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XF - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XG - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .
K4S56163LF-XL - 4M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S56163LF - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • .