K4S56163LF-XE_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S56163LF-XZF, K4S56163LF-XE
Manufacturer:
Samsung semiconductor
File Size:
143.57 KB
Description:
4m x 16bit x 4 banks mobile sdram.
Note:
This datasheet PDF includes multiple part numbers: K4S56163LF-XZF, K4S56163LF-XE.
Please refer to the document for exact specifications by model.
K4S56163LF-XZF, K4S56163LF-XE, 4M x 16Bit x 4 Banks Mobile SDRAM
The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4S56163LF-XZF Features
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad
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