K4S56163LC 16Mx16 Mobile SDRAM 54CSP

Samsung semiconductor

Description

K4S56163LC-R(B)F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev.1.4 Dec.20.
The K4S56163LC is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Specifications

Part number: K4S56163LC
Manufacturer: Samsung semiconductor
File Size: 60.47 KB
Datasheet: K4S56163LC_Samsungsemiconductor.pdf
Description: 16Mx16 Mobile SDRAM 54CSP

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with a

Applications

* ORDERING INFORMATION Part No. Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)
* 1 66MHz(CL=2/3)
* 2 LVCMOS 54 CSP Pb (Pb Free) Interface Package -R(B)R ; Super Low Power, Operating Temperature ; -25° C~85° C. -R(B)F ; Low Power, Operating Temperature ; -25 °C~85 °C. Notes : 1. I

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K4S56163LC 16Mx16 Mobile SDRAM 54CSP Samsung semiconductor

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