K4X56163PI-LE - 16Mx16 Mobile DDR SDRAM
(Samsung semiconductor)
K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X56163PI-FE - 16Mx16 Mobile DDR SDRAM
(Samsung semiconductor)
K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X56163PI-FG - 16Mx16 Mobile DDR SDRAM
(Samsung semiconductor)
K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X56163PE - 16M x16 Mobile DDR SDRAM
(Samsung semiconductor)
K4X56163PE-L(F)G
16M x16 Mobile DDR SDRAM
FEATURES
Mobile-DDR SDRAM
• 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data tr.
K4X56163PE-LFG - 16M x16 Mobile DDR SDRAM
(Samsung semiconductor)
K4X56163PE-L(F)G
16M x16 Mobile DDR SDRAM
FEATURES
Mobile-DDR SDRAM
• 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data tr.
K4X56163PE-LG - 16M x16 Mobile DDR SDRAM
(Samsung semiconductor)
K4X56163PE-L(F)G
16M x16 Mobile DDR SDRAM
FEATURES
Mobile-DDR SDRAM
• 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data tr.