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K4X56163PE-LFG

16M x16 Mobile DDR SDRAM

K4X56163PE-LFG Features

* Mobile-DDR SDRAM

* 1.8V power supply, 1.8V I/O power

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe(DQS)

* Four banks operation

* Differential clock inputs(CK and CK)

* MRS cycle with address key progr

K4X56163PE-LFG General Description

SYMBOL CK, CK TYPE Input DESCRIPTION Mobile-DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activa.

K4X56163PE-LFG Datasheet (698.98 KB)

Preview of K4X56163PE-LFG PDF

Datasheet Details

Part number:

K4X56163PE-LFG

Manufacturer:

Samsung semiconductor

File Size:

698.98 KB

Description:

16m x16 mobile ddr sdram.

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TAGS

K4X56163PE-LFG 16M x16 Mobile DDR SDRAM Samsung semiconductor

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