K4X56163PE Datasheet - Samsung semiconductor

K4X56163PE 16M x16 Mobile DDR SDRAM

SYMBOL CK, CK TYPE Input DESCRIPTION Mobile-DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activa.

K4X56163PE Features

* Mobile-DDR SDRAM

* 1.8V power supply, 1.8V I/O power

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe(DQS)

* Four banks operation

* Differential clock inputs(CK and CK)

* MRS cycle with address key progr

K4X56163PE_Samsungsemiconductor.pdf

K4X56163PE Datasheet Preview — Preview of K4X56163PE PDF

Datasheet Details

Part number:

K4X56163PE

Manufacturer:

Samsung semiconductor

File Size:

698.98 KB

Description:

16m x16 mobile ddr sdram.

K4X56163PE Distributor

📁 Related Datasheet

K4X56163PE-LFG 16M x16 Mobile DDR SDRAM (Samsung semiconductor)

K4X56163PE-LG 16M x16 Mobile DDR SDRAM (Samsung semiconductor)

K4X56163PG-FE 16M x16 Mobile-DDR SDRAM (Samsung semiconductor)

K4X56163PG-FG 16M x16 Mobile-DDR SDRAM (Samsung semiconductor)

K4X56163PG-LE 16M x16 Mobile-DDR SDRAM (Samsung semiconductor)

K4X56163PG-LG 16M x16 Mobile-DDR SDRAM (Samsung semiconductor)

K4X56163PI-FE 16Mx16 Mobile DDR SDRAM (Samsung semiconductor)

K4X56163PI-FG 16Mx16 Mobile DDR SDRAM (Samsung semiconductor)

TAGS

K4X56163PE K4X56163PE 16M x16 Mobile DDR SDRAM Samsung semiconductor