K4S641632K - 64Mb K-die SDRAM

Name: K4S641632K
SKU: K4S641632K-673809

Samsung semiconductor

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Datasheet Details

Part number	K4S641632K
Manufacturer	Samsung semiconductor
File Size	211.22 KB
Description	64Mb K-die SDRAM
Datasheet	K4S641632K_Samsungsemiconductor.pdf

K4S641632K Product details

Description

The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms refr.

📁 K4S641632K Similar Datasheet

K4S641632H - 64Mb H-die SDRAM (Samsung Electronics)
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K4S640832N - 64Mb N-die SDRAM (Samsung)
K4S643232H-TC-L50 - 64Mb H-die (x32) SDRAM (Samsung)
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K4S643232H-TC-L60 - 64Mb H-die (x32) SDRAM (Samsung)
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K4S643232H-UC-L50 - 2M x 32 SDRAM (Samsung)

Other Datasheets by Samsung semiconductor

K4S641632C - 1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632D - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632E - 64Mbit SDRAM
K4S641632F - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632H-L60 - 64Mb H-die SDRAM Specification
K4S641632H-L70 - 64Mb H-die SDRAM Specification

Published: May 6, 2010 |