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K4S64323LF-xx - 2Mx32 Mobile SDRAM 90FBGA

Description

The K4S64323LF is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

Features

  • 2.5V Power Supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature range (-25° C to 85 °C). I.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S64323LH-FC 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FE 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FF 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FG 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FHx 512K x 32Bit x 4 Banks Mobile SDRAM

Full PDF Text Transcription

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K4S64323LF-S(D)N/U/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) www.DataSheet4U.com Revision 1.5 December 2002 Rev. 1.5 Dec 2002 K4S64323LF-S(D)N/U/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 2.5V Power Supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature range (-25° C to 85 °C). Industrial Temperature range (-40° C to 85° C) for low power. 90balls FBGA( -SXXX -Pb, -DXXX -Pb Free).
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