• Part: K4T51163QB-GCD5
  • Description: 512Mb B-die DDR2 SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 633.79 KB
Download K4T51163QB-GCD5 Datasheet PDF
K4T51163QB-GCD5 page 2
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K4T51163QB-GCD5 Key Features

  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin
  • 4 Banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode