900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  Samsung Electronic Components Datasheet  

K6R1008V1B-C Datasheet

128Kx8 Bit High Speed Static RAM

No Preview Available !

K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
PRPErLeIMlimINinAaRrYy
CMOS SRAM
Document Title
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo.
History
Rev. 0.0
Initial release with Design Target.
Rev.1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Rev.2.0
www.DataSheet4U.com
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete 32-SOJ-300 package.
2.3. Add Capacitive load of the test environment in A.C test load.
2.4. Change D.C characteristics.
Items
Previous spec.
(8/10/12ns part)
Changed spec.
(8/10/12ns part)
ICC
160/150/140mA
160/155/150mA
ISB
30mA
50mA
Rev. 2.1
Change Standby and Data Retention Current for L-ver.
Items
Previous spec.
Changed spec.
ISB1
0.5mA
0.7mA
IDR at 3.0V
0.4mA
0.5mA
IDR at 2.0V
0.3mA
0.4mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Feb. 25th, 1998 Final
Aug. 4th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.1
August 1998


  Samsung Electronic Components Datasheet  

K6R1008V1B-C Datasheet

128Kx8 Bit High Speed Static RAM

No Preview Available !

K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
PRPErLeIMlimINinAaRrYy
CMOS SRAM
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation
Standby (TTL) : 50mA(Max.)
(CMOS) : 5mA(Max.)
0.7mA(Max.) - L-Ver. only
Operating K6R1008V1B-8 : 160mA(Max.)
K6R1008V1B-10 : 155mA(Max.)
K6R1008V1B-12 : 150mA(Max.)
• Single 3.3±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
www.DataSh2eVetM4Uin.icmoumm Data Retention ; L-Ver. only
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R1008V1B-J : 32-SOJ-400
K6R1008V1B-T : 32-TSOP2-400CF
GENERAL DESCRIPTION
The K6R1008V1B is a 1,048,576-bit high-speed Static Ran-
dom Access Memory organized as 131,072 words by 8 bits.
The K6R1008V1B uses 8 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNGs advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density high-speed system applications. The
K6R1008V1B is packaged in a 400mil 32-pin plastic SOJ or
TSOP2 forward.
ORDERING INFORMATION
K6R1008V1B-C8/C10/C12
K6R1008V1B-I8/I10/I12
Commercial Temp.
Industrial Temp.
PIN CONFIGURATION(Top View)
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
Pre-Charge Circuit
A0
A1
A2
A3
A4
A5
A6
A7
I/O1~I/O8
Data
Cont.
Memory Array
256 Rows
512x8 Columns
I/O Circuit
Column Select
CLK
Gen.
A8 A9 A10 A11 A12 A13 A14 A15 A16
CS
WE
OE
A0 1
A1 2
A2 3
A3 4
CS 5
I/O1 6
I/O2 7
Vcc 8
Vss 9
I/O3 10
I/O4 11
WE 12
A4 13
A5 14
A6 15
A7 16
SOJ/
TSOP2
32 A16
31 A15
30 A14
29 A13
28 OE
27 I/O8
26 I/O7
25 Vss
24 Vcc
23 I/O6
22 I/O5
21 A12
20 A11
19 A10
18 A9
17 A8
PIN FUNCTION
Pin Name
A0 - A16
WE
CS
OE
I/O1 ~ I/O8
VCC
VSS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+3.3V)
Ground
No Connection
-2-
Rev 2.1
August 1998


Part Number K6R1008V1B-C
Description 128Kx8 Bit High Speed Static RAM
Maker Samsung semiconductor
PDF Download

K6R1008V1B-C Datasheet PDF






Similar Datasheet

1 K6R1008V1B-C 128Kx8 Bit High Speed Static RAM
Samsung semiconductor
2 K6R1008V1B-I 128Kx8 Bit High Speed Static RAM
Samsung semiconductor
3 K6R1008V1B-L 128Kx8 Bit High Speed Static RAM
Samsung semiconductor
4 K6R1008V1B-P 128Kx8 Bit High Speed Static RAM
Samsung semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy